Effect and Mechanism of Dual-Official Group of Ethanolamines on the Chemical Mechanical Polishing of Monocrystalline Silicon

Chemical mechanical polishing (CMP) is a key step in semiconductor technology because it crucial to produce defect-free and flat enough surface for further processing of microelectronic devices. Silicon (Si) wafer widely used integrated circuit (IC) devices, high-density information storage other advanced applications. In this paper, the effect different pH three ethanolamines, such as monoethanolamine (MEA), diethanolamine (DEA), triethanolamine (TEA), on removal rate Si was studied. The influence mechanism MEA its concentration quality were mainly investigated. results show that increased first then decreased with increasing value. Among > DEA TEA. It may be related denser passivation film formed by hydroxyl groups ethanolamines. slowly increased. reached peak value (6800 Å·min −1 ) when 0.15 wt%. changing trend due Si-N bond being generated polished ionization properties MEA, which are indicated through X-ray photoelectron spectroscopy (XPS) Zeta potential measurements. Meanwhile, surfaces low roughness ultra-smooth increase obtained.